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1 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom nm27c256 262,144-bit (32k x 8) high performance cmos eprom general description the nm27c256 is a 256k electrically programmable read only memory. it is manufactured in fairchilds latest cmos split gate eprom technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. the nm27c256 provides microprocessor-based systems exten- sive storage capacity for large portions of operating system and application software. its 90 ns access time provides high speed operation with high-performance cpus. the nm27c256 offers a single chip solution for the code storage requirements of 100% firmware-based equipment. frequently-used software routines are quickly executed from eprom storage, greatly enhancing system utility. the nm27c256 is configured in the standard eprom pinout which provides an easy upgrade path for systems which are currently using standard eproms. block diagram july 1998 the nm27c256 is one member of a high density eprom family which range in densities up to 4 mb. features n high performance cmos 90 ns access time n jedec standard pin configuration 28-pin pdip package 32-pin chip carrier 28-pin cerdip package n drop-in replacement for 27c256 or 27256 n manufacturers identification code ds010833-1 output enable and chip enable logic y decoder x decoder . . . . . . . . . output buffers y gating data outputs o 0 - o 7 v cc gnd v pp oe ce/pgm a 0 - a 14 address inputs ? 1998 fairchild semiconductor corporation
2 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom connection diagrams commercial temp. range (0 c to +70 c) v cc = 5v 10% parameter/order number access time (ns) nm27c256 q, n, v 90 90 nm27c256 q, n, v 100 100 nm27c256 q, n, v 120 120 nm27c256 q, n, v 150 150 nm27c256 q, n, v 200 200 extended temp. range (-40 c to +85 c) v cc = 5v 10% parameter/order number access time (ns) nm27c256 qe, ne, ve 120 120 nm27c256 qe, ne, ve 150 150 nm27c256 qe, ne, ve 200 200 note: surface mount plcc package available for commercial and extended temperature ranges only. package types: nm27c256 q, n, v xxx q = quartz-windowed ceramic dip n = plastic otp dip v = surface-mount plcc ? all packages conform to the jedec standard. ? all versions are guaranteed to function for slower speeds. pin names symbol description a0Ca14 addresses ce/pgm chip enable/program oe output enable o0Co7 outputs xx dont care (during read) plcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 v pp a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd a 19 a 16 a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd 27c080 27c040 27c040 xx/v pp a 16 a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd dlp nm27c256 v cc a 14 a 13 a 8 a 9 a 11 oe a 10 ce/pgm o 7 o 6 o 5 o 4 o 3 a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd 27c512 27c512 xx/v pp a 16 a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd 27c010 xx/v pp a 16 a 15 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 o 0 o 1 o 2 gnd 27c020 27c020 27c010 v cc xx/pgm a 17 a 14 a 13 a 8 a 9 a 11 oe a 10 ce o 7 o 6 o 5 o 4 o 3 27c080 v cc a 18 a 17 a 14 a 13 a 8 a 9 a 11 oe/v pp a 10 ce/pgm o 7 o 6 o 5 o 4 o 3 v cc a 18 a 17 a 14 a 13 a 8 a 9 a 11 oe a 10 ce/pgm o 7 o 6 o 5 o 4 o 3 v cc xx/pgm xx a 14 a 13 a 8 a 9 a 11 oe a 10 ce o 7 o 6 o 5 o 4 o 3 v cc a 14 a 13 a 8 a 9 a 11 oe/v pp a 10 ce/pgm o 7 o 6 o 5 o 4 o 3 note: compatible eprom pin configurations are shown in the blocks adjacent to the nm27c256 pins. a 8 a 9 a 11 xx oe a 10 ce/pgm o 7 o 6 a 6 a 5 a 4 a 3 a 2 a 1 a 0 xx o 0 a 7 a 12 v pp xx v cc a 14 a 13 o 1 o 2 gnd xx o 3 o 4 o 5 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 4 3 2 1 32 31 30 ds010833-2 ds010833-3 top
3 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom absolute maximum ratings (note 1) storage temperature -65 c to +150 c all input voltages except a9 with respect to ground -0.6v to +7v v pp and a9 with respect to ground -0.7v to +14v v cc supply voltage with respect to ground -0.6v to +7v esd protection > 2000v all output voltages with respect to ground v cc + 1.0v to gnd -0.6v operating range range temperature v cc comml 0 c to +70 c +5v 10% industrial -40 c to +85 c +5v 10% read operation dc electrical characteristics over operating range with v pp = v cc symbol parameter test conditions min max units v il input low level -0.5 0.8 v v ih input high level 2.0 v cc +1 v v ol output low voltage i ol = 2.1 ma 0.4 v v oh output high voltage i oh = -2.5 ma 3.5 v i sb1 v cc standby current ce = v cc 0.3v 100 m a (note 11) (cmos) i sb2 v cc standby current (ttl) ce = v ih 1ma i cc1 v cc active current ce = oe = v il ,f=5 mhz 35 ma ttl inputs inputs = v ih or v il , i/o = 0 ma i pp v pp supply current v pp = v cc 10 m a v pp v pp read voltage v cc - 0.7 v cc v i li input load current v in = 5.5v or gnd -1 1 m a i lo output leakage current v out = 5.5v or gnd -10 10 m a ac electrical characteristics over operating range with v pp = v cc symbol parameter 90 100 120 150 200 units min max min max min max min max min max t acc address to output delay 90 100 120 150 200 ns t ce ce to output delay 90 100 120 150 200 t oe oe to output delay 35 50 50 50 50 t df output disable to 30 30 35 45 45 (note 2) output float t oh output hold from 00000 (note 2) addresses, ce or oe, whichever occurred first capacitance (note 2) t a = +25?c, f = 1 mhz symbol parameter conditions typ max units c in input capacitance v in = 0v 6 12 pf c out output capacitance v out = 0v 9 12 pf
4 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom ac test conditions output load 1 ttl gate and cl = 100 pf (note 8) input rise and fall times 5 ns input pulse levels 0.45 to 2.4v timing measurement reference level (note 10) inputs 0.8v and 2.0v outputs 0.8v and 2.0v ac waveforms (note 6) (note 7) (note 9) note 1: stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is stress rating on ly and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note 2: this parameter is only sampled and is not 100% tested. note 3: oe may be delayed up to t acc - t oe after the falling edge of ce without impacting t acc . note 4: the t df and t cf compare level is determined as follows: high to tri-state ? , the measured v oh1 (dc) - 0.10v; low to tri-state, the measured v ol1 (dc) + 0.10v. note 5: tri-state may be attained using oe or ce. note 6: the power switching characteristics of eproms require careful device decoupling. it is recommended that at least a 0.1 m f ceramic capacitor be used on every device between v cc and gnd. note 7: the outputs must be restricted to v cc + 1.0v to avoid latch-up and device damage. note 8: ttl gate: i ol = 1.6 ma, i oh = -400 m a. c l = 100 pf includes fixture capacitance. note 9: v pp may be connected to v cc except during programming. note 10: inputs and outputs can undershoot to -2.0v for 20 ns max. note 11: cmos inputs: v il = gnd 0.3v, v ih = v cc 0.3v. programming characteristics (note 12) (note 13) (note 14) (note 15) symbol parameter conditions min typ max units addresses valid valid output hi-z hi-z 2.0v 0.8v 2.0v 0.8v 2.0v 0.8v 2.0v 0.8v addresses ce oe output t oe (note 3) t acc (note 3) t ce t ce (notes 4, 5) t oh t df (notes 4, 5) ds010833-4
5 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom programming characteristics (note 12) (note 13) (note 14) (note 15) (continued) symbol parameter conditions min typ max units t as address setup time 1 m s t oes oe setup time 1 m s t vps v pp setup time 1 m s t vcs v cc setup time 1 m s t ds data setup time 1 m s t ah address hold time 0 m s t dh data hold time 1 m s t df output enable to output ce = v il 060ns float delay t pw program pulse width 45 50 105 m s t oe data valid from oe ce = v il 100 ns i pp v pp supply current ce = v il 30 ma during programming pulse i cc v cc supply current 50 ma t a temperature ambient 20 25 30 c v cc power supply voltage 6.25 6.5 6.75 v v pp programming supply voltage 12.5 12.75 13.0 v t fr input rise, fall time 5 ns v il input low voltage 0.0 0.45 v v ih input high voltage 2.4 4.0 v t in input timing reference voltage 0.8 2.0 v t out output timing reference voltage 0.8 2.0 v programming waveforms (note 14) note 12: fairchilds standard product warranty applies to devices programmed to specifications described herein. note 13: v cc must be applied simultaneously or before v pp and removed simultaneously or after v pp . the eprom must not be inserted into or removed from a board with voltage applied to v pp or v cc . note 14: the maximum absolute allowable voltage which may be applied to the v pp pin during programming is 14v. care must be taken when switching the v pp supply to prevent any overshoot from exceeding this 14v maximum specification. at least a 0.1 m f capacitor is required across v pp , v cc to gnd to suppress spurious voltage transients which may damage the device. note 15: during power up the pgm pin must be brought high ( 3 v ih ) either coincident with or before power is applied to v pp . address n data in stable add n data out valid add n 2.0v 0.8v 2.0v 0.8v 5.25v 12.75v 2.0v 0.8v 2.0v 0.8v addresses data ce v pp v cc oe t oe t oes t pw t vps t vcs t ds t as t ah t df t dh program program verify ds010833-5
6 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom turbo programming algorithm flow chart v cc = 6.5v v pp = 12.75v n = 0 address = first location check all bytes 1st: v cc = v pp = 6.0v 2nd: v cc = v pp = 4.3v program one 50 s pulse increment n address = first location verify byte n = 10? device failed last address ? increment address n = 0 program one 50 s pulse increment address verify byte last address ? pass no fail yes yes pass no fail no yes ds010833-6 note: the standard national semiconductor algorithm may also be used but it will have longer programming time. figure 1.
7 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom functional description device operation the six modes of operation of the eprom are listed in table 1. it should be noted that all inputs for the six modes are at ttl levels. the power supplies required are v cc and v pp . the v pp power supply must be at 12.75v during the three programming modes, and must be at 5v in the other three modes. the v cc power supply must be at 6.5v during the three programming modes, and at 5v in the other three modes. read mode the eprom has two control functions, both of which must be logically active in order to obtain data at the outputs. chip enable (ce/pgm) is the power control and should be used for device selection. output enable (oe) is the output control and should be used to gate data to the output pins, independent of device selection. assuming that addresses are stable, address access time (t acc ) is equal to the delay from ce to output (t ce ). data is available at the outputs t oe after the falling edge of oe, assuming that ce/pgm has been low and addresses have been stable for at least t acc Ct oe . standby mode the eprom has a standby mode which reduces the active power dissipation by over 99%, from 385 mw to 0.55 mw. the eprom is placed in the standby mode by applying a cmos high signal to the ce/pgm input. when in standby mode, the outputs are in a high impedance state, independent of the oe input. output disable the eprom is placed in output disable by applying a ttl high signal to the oe input. when in output disable all circuitry is enabled, except the outputs are in a high impedance state (tri- state). output or-typing because the eprom is usually used in larger memory arrays, fairchild has provided a 2-line control function that accommo- dates this use of multiple memory connections. the 2-line control function allows for: 1. the lowest possible memory power dissipation, and 2. complete assurance that output bus contention will not occur. to most efficiently use these two control lines, it is recommended that ce/pgm be decoded and used as the primary device select- ing function, while oe be made a common connection to all devices in the array and connected to the read line from the system control bus. this assures that all deselected memory devices are in their low power standby modes and that the output pins are active only when data is desired from a particular memory device. programming caution: exceeding 14v on pin 1 (v pp ) will damage the eprom. initially, and after each erasure, all bits of the eprom are in the 1s state. data is introduced by selectively programming 0s into the desired bit locations. although only 0s will be pro- grammed, both 1s and 0s can be presented in the data word. the only way to change a 0 to a 1 is by ultraviolet light erasure. the eprom is in the programming mode when the v pp power supply is at 12.75v and oe is at v ih . it is required that at least a 0.1 m f capacitor be placed across v pp , v cc to ground to suppress spurious voltage transients which may damage the device. the data to be programmed is applied 8 bits in parallel to the data output pins. the levels required for the address and data inputs are ttl. when the address and data are stable, an active low, ttl program pulse is applied to the ce/pgm input. a program pulse must be applied at each address location to be programmed. the eprom is programmed with the turbo programming algorithm shown in figure 1. each address is programmed with a series of 50 m s pulses until it verifies good, up to a maximum of 10 pulses. most memory cells will program with a single 50 m s pulse. (the standard national semiconductor algorithm may also be used but it will have longer programming time.) the eprom must not be programmed with a dc signal applied to the ce/pgm input. programming multiple eprom in parallel with the same data can be easily accomplished due to the simplicity of the programming requirments. like inputs of the parallel eprom may be connected together when they are programmed with the same data. a low level ttl pulse applied to the ce/pgm input programs the paralleled eprom. program inhibit programming multiple eproms in parallel with different data is also easily accomplished. except for ce/pgm, all like inputs (including oe) of the parallel eproms may be common. a ttl low level program pulse applied to an eproms ce/pgm input with v pp at 12.75v will program that eprom. a ttl high level ce/ pgm input inhibits the other eproms from being programmed. program verify a verify should be performed on the programmed bits to determine whether they were correctly programmed. the verify may be performed with v pp at 12.75v. v pp must be at v cc , except during programming and program verify. after programming opaque labels should be placed over the eprom window to prevent unintentional erasure. covering the window will also prevent temporary functional failure due to the generation of photo currents. manufacturers identification code the eprom has a manufacturers identification code to aid in programming. when the device is inserted in an eprom pro- grammer socket, the programmer reads the code and then automatically calls up the specific programming algorithm for the part. this automatic programming control is only possible with programmers which have the capability of reading the code. the manufacturers identification code, shown in table 2, specifi- cally identifies the manufacturer and device type. the code for nm27c256 is 8f04, where 8f designates that it is made by fairchild semiconductor, and 04 designates a 256k part. the code is accessed by applying 12v 0.5v to address pin a9. addresses a1Ca8, a10Ca16, and all control pins are held at v il . address pin a0 is held at v il for the manufacturers code, and held at v ih for the device code. the code is read on the eight data pins, o0 Co7. proper code access is only guaranteed at 25 c to 5 c.
8 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom functional description (continued) erasure characteristics the erasure characteristics of the device are such that erasure begins to occur when exposed to light with wavelengths shorter than approximately 4000 angstroms (?). it should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000?C4000? range. the recommended erasure procedure for the eprom is expo- sure to short wave ultraviolet light which has a wavelength of 2537?. the integrated dose (i.e., uv intensity x exposure time) for erasure should be a minimum of 15w-sec/cm 2 . the eprom should be placed within 1 inch of the lamp tubes during erasure. some lamps have a filter on their tubes which should be removed before erasure an erasure system should be calibrated periodically. the distance from lamp to device should be maintained at one inch. the erasure time increases as the square of the distance from the lamp (if distance is doubled the erasure time increases by factor of 4). lamps lose intensity as they age. when a lamp is changed, the distance has changed, or the lamp has aged, the system should be checked to make certain full erasure is occurring. incomplete erasure will cause symptoms that can be misleading. program- mers, components, and even system designs have been errone- ously suspected when incomplete erasure was the problem. system consideration the power switching characteristics of eproms require careful decoupling of the devices. the supply current, i cc, has three segments that are of interest to the system designer: the standby current level, the active current level, and the transient current peaks that are produced by voltage transitions on input pins. the magnitude of these transient current peaks is dependent of the output capacitance loading of the device. the associated v cc transient voltage peaks can be suppressed by properly selected decoupling capacitors. it is recommended that at least a 0.1 m f ceramic capacitor be used on every device between v cc and gnd. this should be a high frequency capacitor of low inherent inductance. in addition, at least a 4.7 m f bulk electrolytic capacitor should be used between v cc and gnd for each eight devices. the bulk capacitor should be located near where the power supply is connected to the array. the purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of the pc board traces. mode selection the modes of operation of nm27c256 listed in table 1. a single 5v power supply is required in the read mode. all inputs are ttl levels except for v pp and a9 for device signature. table 1. modes selection pins ce/pgm oe v pp v cc outputs mode read v il v il v cc 5.0v d out output disable x v ih v cc 5.0v high-z (note 16) standby v ih xv cc 5.0v high-z programming v il vih 12.75v 6.25v d in program verify v ih v il 12.75v 6.25v d out program inhibit v ih v ih 12.75v 6.25v high-z note 16: x can be v il or v ih . table 2. manufacturers identification code pins a0 a9 o7 o6 o5 o4 o3 o2 o1 o0 hex (10) (24) (19) (18) (17) (16) (15) (13) (12) (11) data manufacturer code v il 12v100011118f device code v ih 12v0000010004
9 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom physical dimensions inches (millimeters) unless otherwise noted 1.450 [36.83] max 28 1 15 14 r 0.025 [0.64] r 0.030-0.055 [0.76 - 1.40] typ 0.280 0.010 [7.11 0.25] uv window 0.600 [15.24] max glass 0.520 0.006 [13.21 0.15] 0.175 max 0.060-0.100 typ 0.050-0.060 typ 0.015-0.021 typ 86 -94 typ 0.150 min typ 0.015 -0.060 typ 0.090-0.110 typ 0.005 min typ 0.225 max typ 0.125 min typ 0.590-0.620 [14.99 - 15.75] glass sealant 95 5 typ 0.685 +0.025 -0.060 17.40 +0.64 -1.52 0.010 0.002 [0.25 0.05] typ 0.625 +0.025 -0.015 0.008-0.015 (0.229-0.381) 15.88 +0.635 -0.381 0.580 (14.73) 95 5 0.600 - 0.620 (15.24 - 15.75) 0.030 (0.762) max ( ( 0.108 0.010 (2.540 0.254) 0.018 0.003 (0.457 0.076) 0.20 (0.508) 0.125-0.145 (3.175-3.583) 0.125-0.165 (3.175-4.191) 0.050 (1.270) typ 0.053 - 0.069 (1.346 - 1.753) 0.050 0.015 (1.270 0.381) min 88 94 typ 12 34 28 27 26 25 1.393 - 1.420 (35.38 - 36.07) 0.510 0.005 (12.95 0.127) 0.062 (1.575) pin #1 ident 5 24 6 23 22 21 20 19 18 17 16 7 8 9 1011121314 15 rad 28-lead plastic one-time-programmable dual-in-line package order number nm27c256nxxx package number n28b uv window cavity dual-in-line cerdip package (q) order number nm27c256qxxx package number j28aq
10 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom physical dimensions inches (millimeters) unless otherwise noted 0.007[0.18] a s s f-g 0.007[0.18] b s d-e 0.449-0.453 [11.40-11.51] s 0.045 [1.143] 0.000-0.010 [0.00-0.25] polished optional 0.585-0.595 [14.86-15.11] 0.549-0.553 [13.94-14.05] -b- -f- -e- -g- 0.050 21 29 30 1 4 20 14 13 5 -d- 0.007[0.18] b s d-e s 0.002[0.05] b s -a- 0.485-0.495 [12.32-12.57] 0.007[0.18] a s s f-g a 0.002[0.05] s 0.007[0.18] h s s d-e, f-g 0.010[0.25] b a s d-e, f-g 0.118-0.129 [3.00-3.28] l b b 45 x 0.042-0.048 [1.07-1.22] 0.026-0.032 [0.66-0.81] typ 0.0100 [0.254] 0.030-0.040 [0.76-1.02] r 0.005 [0.13] max 0.020 [0.51] 0.045 [1.14] detail a typical rotated 90 0.027-0.033 [0.69-0.84] 0.025 [0.64] min 0.025 [0.64] min 0.031-0.037 [0.79-0.94] 0.053-0.059 [1.65-1.80] 0.006-0.012 [0.15-0.30] 0.019-0.025 [0.48-0.64] 0.065-0.071 [1.65-1.80] 0.021-0.027 [0.53-0.69] section b-b typical s 0.007[0.18] c m s d-e, f-g 0.015[0.38] c d-e, f-g 0.490-0530 [12.45-13.46] 0.078-0.095 [1.98-2.41] 0.013-0.021 [0.33-0.53] 0.004[0.10] 0.123-0.140 [3.12-3.56] see detail a -j- -c- 0.400 [10.16] ( ) typ 0.541-0.545 [13.74-13-84] 0.023-0.029 [0.58-0.74] 0.106-0.112 [2.69-2.84] 60 0.015 [0.38] base plane -h- min typ s 32-lead plastic leaded chip carrier (plcc) order number nm27c256vxxx package number va32a
11 www.fairchildsemi.com nm27c256 262,144-bit (32k x 8) high performance cmos eprom fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and fai rchild reserves the right at any time without notice to change said circuitry and specifications. life support policy fairchild's products are not authorized for use as critical components in life support devices or systems without the express w ritten approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably ex- pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. fairchild semiconductor fairchild semiconductor fairchild semiconductor fairchild semiconductor americas europe hong kong japan ltd. customer response center fax: +44 (0) 1793-856858 8/f, room 808, empire centre 4f, natsume bldg. tel. 1-888-522-5372 deutsch tel: +49 (0) 8141-6102-0 68 mody road, tsimshatsui east 2-18-6, yushima, bunkyo-ku english tel: +44 (0) 1793-856856 kowloon. hong kong tokyo, 113-0034 japan fran?ais tel: +33 (0) 1-6930-3696 tel; +852-2722-8338 tel: 81-3-3818-8840 italiano tel: +39 (0) 2-249111-1 fax: +852-2722-8383 fax: 81-3-3818-8841

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